inchange semiconductor isc product specification isc silicon npn power transistor BUV46FI description collector-emitter sustaining voltage- : v ceo(sus) = 400v(min.) high speed switching applications designed for high voltage, fast switching applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v ces collector-emitter voltage v be = 0 850 v v cex collector-emitter voltage v be = -2.5v 850 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 5 a i b b base current-continuous 3 a p c collector power dissipation @t c =25 30 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 4.12 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUV46FI electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0 400 v v ce( sat )-1 collector-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 3.5a; i b = 0.7a 5.0 v v be( sat ) base-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.3 v i cer collector cutoff current v ce = 850v; r be =10 v ce = 850v; r be =10 ;t c =125 0.1 1.0 ma i cex collector cutoff current v ce = 850v; v be =-2.5v v ce = 850v; v be =-2.5v;t j = 125 0.3 2.0 ma i ebo emitter cutoff current v eb = 7v; i c = 0 1.0 ma switching times t on turn-on time 1.0 s t s storage time 3.0 s t f fall time i c = 2.5a;i b1 =-i b2 = 0.5a;v cc = 150v 0.8 s isc website www.iscsemi.cn
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